Power Performance at 40 GHz on Quaternary Barrier InAlGaN/GaN HEMT
Identifieur interne : 000680 ( Main/Repository ); précédent : 000679; suivant : 000681Power Performance at 40 GHz on Quaternary Barrier InAlGaN/GaN HEMT
Auteurs : RBID : Pascal:13-0259634Descripteurs français
- Pascal (Inist)
- Evaluation performance, Transistor mobilité électron élevée, Mode appauvrissement, Hétérostructure, Mobilité Hall, Mobilité électron, Forme en T, Grille transistor, Gain courant, Gain puissance, Fréquence coupure, Paramètre s, Estimation paramètre, Puissance sortie, Dispositif hyperfréquence, Fabrication microélectronique, Nitrure d'indium, Nitrure d'aluminium, Composé quaternaire, Nitrure de gallium, Composé binaire, Oxyde d'aluminium, Gallium alliage, InAlGaN, GaN, Al2O3.
English descriptors
- KwdEn :
- Aluminium nitride, Aluminium oxide, Binary compound, Current gain, Cut off frequency, Depletion mode, Electron mobility, Gallium alloy, Gallium nitride, Hall mobility, Heterostructures, High electron mobility transistor, Indium nitride, Microelectronic fabrication, Microwave device, Output power, Parameter estimation, Performance evaluation, Power gain, Quaternary compound, T shape, Transistor gate, s parameter.
Abstract
Depletion-mode high-electron mobility transistors (HEMTs) based on a quaternary barrier In0.11Al0.72Ga0.17N/GaN heterostructure on sapphire substrate are fabricated and characterized. This structure shows a very high Hall electron mobility of 2200 cm2/V . s, which is the highest value ever reported on In-containing GaN-based HEMTs. For T-shaped gate transistor with a gate length of 75 nm, current gain (ft) and power gain (fmax) cutoff frequencies of 113 and 200 GHz are extracted from S-parameter measurements, respectively. Nonlinear characterization of a T-shaped gate device with a gate length of 225 nm gives an output power density of 2 W/mm at 40 GHz. These results clearly demonstrate the capabilities of such quaternary barrier-based devices.
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aut.</sZ><sZ>2 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Nord-Pas-de-Calais</region></placeName></affiliation></author><author><name sortKey="Ketteniss, Nico" uniqKey="Ketteniss N">Nico Ketteniss</name><affiliation wicri:level="3"><inist:fA14 i1="02"><s1>GaN Device Technology, RWTH Aachen University</s1><s2>Aachen 52074</s2><s3>DEU</s3><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="1">Rhénanie-du-Nord-Westphalie</region><region type="district" nuts="2">District de Cologne</region><settlement type="city">Aix-la-Chapelle</settlement></placeName></affiliation></author><author><name sortKey="Behmenburg, Hannes" uniqKey="Behmenburg H">Hannes Behmenburg</name><affiliation wicri:level="3"><inist:fA14 i1="02"><s1>GaN Device Technology, RWTH Aachen University</s1><s2>Aachen 52074</s2><s3>DEU</s3><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="1">Rhénanie-du-Nord-Westphalie</region><region type="district" nuts="2">District de Cologne</region><settlement type="city">Aix-la-Chapelle</settlement></placeName></affiliation></author><author><name sortKey="Defrance, Nicolas" uniqKey="Defrance N">Nicolas Defrance</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Microwave Power Devices Group, Institut d'Electronique, Microelectronique et Nanotechnologie, UMR-CNRS 8520, Lille University</s1><s2>Villeneuve d'Ascq 59652</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country>France</country><wicri:noRegion>59652</wicri:noRegion><wicri:noRegion>Lille University</wicri:noRegion><wicri:noRegion>Villeneuve d'Ascq 59652</wicri:noRegion></affiliation></author><author><name sortKey="Hoel, Virginie" uniqKey="Hoel V">Virginie Hoel</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Microwave Power Devices Group, Institut d'Electronique, Microelectronique et Nanotechnologie, UMR-CNRS 8520, Lille University</s1><s2>Villeneuve d'Ascq 59652</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Nord-Pas-de-Calais</region></placeName></affiliation></author><author><name sortKey="Kalisch, Holger" uniqKey="Kalisch H">Holger Kalisch</name><affiliation wicri:level="3"><inist:fA14 i1="02"><s1>GaN Device Technology, RWTH Aachen University</s1><s2>Aachen 52074</s2><s3>DEU</s3><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="1">Rhénanie-du-Nord-Westphalie</region><region type="district" nuts="2">District de Cologne</region><settlement type="city">Aix-la-Chapelle</settlement></placeName></affiliation></author><author><name sortKey="Vescan, Andrei" uniqKey="Vescan A">Andrei Vescan</name><affiliation wicri:level="3"><inist:fA14 i1="02"><s1>GaN Device Technology, RWTH Aachen University</s1><s2>Aachen 52074</s2><s3>DEU</s3><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="1">Rhénanie-du-Nord-Westphalie</region><region type="district" nuts="2">District de Cologne</region><settlement type="city">Aix-la-Chapelle</settlement></placeName></affiliation></author><author><name sortKey="Heuken, Michael" uniqKey="Heuken M">Michael Heuken</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>AIXTRON SE</s1><s2>Herzogenrath 52134</s2><s3>DEU</s3><sZ>9 aut.</sZ></inist:fA14><country>Allemagne</country><wicri:noRegion>52134</wicri:noRegion><wicri:noRegion>AIXTRON SE</wicri:noRegion><wicri:noRegion>AIXTRON SE</wicri:noRegion></affiliation></author><author><name sortKey="De Jaeger, Jean Claude" uniqKey="De Jaeger J">Jean-Claude De Jaeger</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Microwave Power Devices Group, Institut d'Electronique, Microelectronique et Nanotechnologie, UMR-CNRS 8520, Lille University</s1><s2>Villeneuve d'Ascq 59652</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Nord-Pas-de-Calais</region></placeName></affiliation></author></titleStmt><publicationStmt><idno type="inist">13-0259634</idno><date when="2013">2013</date><idno type="stanalyst">PASCAL 13-0259634 INIST</idno><idno type="RBID">Pascal:13-0259634</idno><idno type="wicri:Area/Main/Corpus">000952</idno><idno type="wicri:Area/Main/Repository">000680</idno></publicationStmt><seriesStmt><idno type="ISSN">0741-3106</idno><title level="j" type="abbreviated">IEEE electron device lett.</title><title level="j" type="main">IEEE electron device letters</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Aluminium nitride</term><term>Aluminium oxide</term><term>Binary compound</term><term>Current gain</term><term>Cut off frequency</term><term>Depletion mode</term><term>Electron mobility</term><term>Gallium alloy</term><term>Gallium nitride</term><term>Hall mobility</term><term>Heterostructures</term><term>High electron mobility transistor</term><term>Indium nitride</term><term>Microelectronic fabrication</term><term>Microwave device</term><term>Output power</term><term>Parameter estimation</term><term>Performance evaluation</term><term>Power gain</term><term>Quaternary compound</term><term>T shape</term><term>Transistor gate</term><term>s parameter</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Evaluation performance</term><term>Transistor mobilité électron élevée</term><term>Mode appauvrissement</term><term>Hétérostructure</term><term>Mobilité Hall</term><term>Mobilité électron</term><term>Forme en T</term><term>Grille transistor</term><term>Gain courant</term><term>Gain puissance</term><term>Fréquence coupure</term><term>Paramètre s</term><term>Estimation paramètre</term><term>Puissance sortie</term><term>Dispositif hyperfréquence</term><term>Fabrication microélectronique</term><term>Nitrure d'indium</term><term>Nitrure d'aluminium</term><term>Composé quaternaire</term><term>Nitrure de gallium</term><term>Composé binaire</term><term>Oxyde d'aluminium</term><term>Gallium alliage</term><term>InAlGaN</term><term>GaN</term><term>Al2O3</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Depletion-mode high-electron mobility transistors (HEMTs) based on a quaternary barrier In<sub>0.11</sub>Al<sub>0.72</sub>Ga<sub>0.17</sub>N/GaN heterostructure on sapphire substrate are fabricated and characterized. This structure shows a very high Hall electron mobility of 2200 cm<sup>2</sup>/V . s, which is the highest value ever reported on In-containing GaN-based HEMTs. For T-shaped gate transistor with a gate length of 75 nm, current gain (f<sub>t</sub>) and power gain (f<sub>max</sub>) cutoff frequencies of 113 and 200 GHz are extracted from S-parameter measurements, respectively. Nonlinear characterization of a T-shaped gate device with a gate length of 225 nm gives an output power density of 2 W/mm at 40 GHz. These results clearly demonstrate the capabilities of such quaternary barrier-based devices.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0741-3106</s0></fA01><fA02 i1="01"><s0>EDLEDZ</s0></fA02><fA03 i2="1"><s0>IEEE electron device lett.</s0></fA03><fA05><s2>34</s2></fA05><fA06><s2>8</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Power Performance at 40 GHz on Quaternary Barrier InAlGaN/GaN HEMT</s1></fA08><fA11 i1="01" i2="1"><s1>LECOURT (Francois)</s1></fA11><fA11 i1="02" i2="1"><s1>AGBOTON (Alain)</s1></fA11><fA11 i1="03" i2="1"><s1>KETTENISS (Nico)</s1></fA11><fA11 i1="04" i2="1"><s1>BEHMENBURG (Hannes)</s1></fA11><fA11 i1="05" i2="1"><s1>DEFRANCE (Nicolas)</s1></fA11><fA11 i1="06" i2="1"><s1>HOEL (Virginie)</s1></fA11><fA11 i1="07" i2="1"><s1>KALISCH (Holger)</s1></fA11><fA11 i1="08" i2="1"><s1>VESCAN (Andrei)</s1></fA11><fA11 i1="09" i2="1"><s1>HEUKEN (Michael)</s1></fA11><fA11 i1="10" i2="1"><s1>DE JAEGER (Jean-Claude)</s1></fA11><fA14 i1="01"><s1>Microwave Power Devices Group, Institut d'Electronique, Microelectronique et Nanotechnologie, UMR-CNRS 8520, Lille University</s1><s2>Villeneuve d'Ascq 59652</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>10 aut.</sZ></fA14><fA14 i1="02"><s1>GaN Device Technology, RWTH Aachen University</s1><s2>Aachen 52074</s2><s3>DEU</s3><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></fA14><fA14 i1="03"><s1>AIXTRON SE</s1><s2>Herzogenrath 52134</s2><s3>DEU</s3><sZ>9 aut.</sZ></fA14><fA20><s1>978-980</s1></fA20><fA21><s1>2013</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>222V</s2><s5>354000506565460140</s5></fA43><fA44><s0>0000</s0><s1>© 2013 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>13 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>13-0259634</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>IEEE electron device letters</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>Depletion-mode high-electron mobility transistors (HEMTs) based on a quaternary barrier In<sub>0.11</sub>Al<sub>0.72</sub>Ga<sub>0.17</sub>N/GaN heterostructure on sapphire substrate are fabricated and characterized. This structure shows a very high Hall electron mobility of 2200 cm<sup>2</sup>/V . s, which is the highest value ever reported on In-containing GaN-based HEMTs. For T-shaped gate transistor with a gate length of 75 nm, current gain (f<sub>t</sub>) and power gain (f<sub>max</sub>) cutoff frequencies of 113 and 200 GHz are extracted from S-parameter measurements, respectively. Nonlinear characterization of a T-shaped gate device with a gate length of 225 nm gives an output power density of 2 W/mm at 40 GHz. These results clearly demonstrate the capabilities of such quaternary barrier-based devices.</s0></fC01><fC02 i1="01" i2="X"><s0>001D03F04</s0></fC02><fC02 i1="02" i2="X"><s0>001D03F02</s0></fC02><fC02 i1="03" i2="X"><s0>001D03F08</s0></fC02><fC02 i1="04" i2="X"><s0>001D03F17</s0></fC02><fC03 i1="01" i2="X" l="FRE"><s0>Evaluation performance</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="ENG"><s0>Performance evaluation</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="SPA"><s0>Evaluación prestación</s0><s5>01</s5></fC03><fC03 i1="02" i2="X" l="FRE"><s0>Transistor mobilité électron élevée</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="ENG"><s0>High electron mobility transistor</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="SPA"><s0>Transistor movibilidad elevada electrones</s0><s5>02</s5></fC03><fC03 i1="03" i2="X" l="FRE"><s0>Mode appauvrissement</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="ENG"><s0>Depletion mode</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="SPA"><s0>Modo 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estimation</s0><s5>13</s5></fC03><fC03 i1="13" i2="X" l="SPA"><s0>Estimación parámetro</s0><s5>13</s5></fC03><fC03 i1="14" i2="X" l="FRE"><s0>Puissance sortie</s0><s5>14</s5></fC03><fC03 i1="14" i2="X" l="ENG"><s0>Output power</s0><s5>14</s5></fC03><fC03 i1="14" i2="X" l="SPA"><s0>Potencia salida</s0><s5>14</s5></fC03><fC03 i1="15" i2="X" l="FRE"><s0>Dispositif hyperfréquence</s0><s5>15</s5></fC03><fC03 i1="15" i2="X" l="ENG"><s0>Microwave device</s0><s5>15</s5></fC03><fC03 i1="15" i2="X" l="SPA"><s0>Dispositivo hiperfrecuencia</s0><s5>15</s5></fC03><fC03 i1="16" i2="X" l="FRE"><s0>Fabrication microélectronique</s0><s5>16</s5></fC03><fC03 i1="16" i2="X" l="ENG"><s0>Microelectronic fabrication</s0><s5>16</s5></fC03><fC03 i1="16" i2="X" l="SPA"><s0>Fabricación microeléctrica</s0><s5>16</s5></fC03><fC03 i1="17" i2="X" l="FRE"><s0>Nitrure d'indium</s0><s5>22</s5></fC03><fC03 i1="17" i2="X" l="ENG"><s0>Indium nitride</s0><s5>22</s5></fC03><fC03 i1="17" i2="X" l="SPA"><s0>Indio nitruro</s0><s5>22</s5></fC03><fC03 i1="18" i2="X" l="FRE"><s0>Nitrure d'aluminium</s0><s5>23</s5></fC03><fC03 i1="18" i2="X" l="ENG"><s0>Aluminium nitride</s0><s5>23</s5></fC03><fC03 i1="18" i2="X" l="SPA"><s0>Aluminio nitruro</s0><s5>23</s5></fC03><fC03 i1="19" i2="X" l="FRE"><s0>Composé quaternaire</s0><s5>24</s5></fC03><fC03 i1="19" i2="X" l="ENG"><s0>Quaternary compound</s0><s5>24</s5></fC03><fC03 i1="19" i2="X" l="SPA"><s0>Compuesto cuaternario</s0><s5>24</s5></fC03><fC03 i1="20" i2="X" l="FRE"><s0>Nitrure de gallium</s0><s5>25</s5></fC03><fC03 i1="20" i2="X" l="ENG"><s0>Gallium nitride</s0><s5>25</s5></fC03><fC03 i1="20" i2="X" l="SPA"><s0>Galio nitruro</s0><s5>25</s5></fC03><fC03 i1="21" i2="X" l="FRE"><s0>Composé binaire</s0><s5>26</s5></fC03><fC03 i1="21" i2="X" l="ENG"><s0>Binary compound</s0><s5>26</s5></fC03><fC03 i1="21" i2="X" l="SPA"><s0>Compuesto binario</s0><s5>26</s5></fC03><fC03 i1="22" i2="X" l="FRE"><s0>Oxyde d'aluminium</s0><s5>27</s5></fC03><fC03 i1="22" i2="X" l="ENG"><s0>Aluminium oxide</s0><s5>27</s5></fC03><fC03 i1="22" i2="X" l="SPA"><s0>Aluminio óxido</s0><s5>27</s5></fC03><fC03 i1="23" i2="X" l="FRE"><s0>Gallium alliage</s0><s5>28</s5></fC03><fC03 i1="23" i2="X" l="ENG"><s0>Gallium alloy</s0><s5>28</s5></fC03><fC03 i1="23" i2="X" l="SPA"><s0>Galio aleación</s0><s5>28</s5></fC03><fC03 i1="24" i2="X" l="FRE"><s0>InAlGaN</s0><s4>INC</s4><s5>82</s5></fC03><fC03 i1="25" i2="X" l="FRE"><s0>GaN</s0><s4>INC</s4><s5>83</s5></fC03><fC03 i1="26" i2="X" l="FRE"><s0>Al2O3</s0><s4>INC</s4><s5>84</s5></fC03><fC07 i1="01" i2="X" l="FRE"><s0>Composé III-V</s0><s5>17</s5></fC07><fC07 i1="01" i2="X" l="ENG"><s0>III-V compound</s0><s5>17</s5></fC07><fC07 i1="01" i2="X" l="SPA"><s0>Compuesto III-V</s0><s5>17</s5></fC07><fC07 i1="02" i2="X" l="FRE"><s0>Composé III-VI</s0><s5>18</s5></fC07><fC07 i1="02" i2="X" l="ENG"><s0>III-VI compound</s0><s5>18</s5></fC07><fC07 i1="02" i2="X" l="SPA"><s0>Compuesto III-VI</s0><s5>18</s5></fC07><fN21><s1>252</s1></fN21><fN44 i1="01"><s1>OTO</s1></fN44><fN82><s1>OTO</s1></fN82></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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